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NSB9435T1
Preferred Device
High Current Bias Resistor Transistor
PNP Silicon
* Collector -Emitter Sustaining Voltage -
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
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* High DC Current Gain -
hFE = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc
* Low Collector -Emitter Saturation Voltage - * *
VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc SOT-223 Surface Mount Packaging ESD Rating - Human Body Model: Class 1B ESD Rating - Machine Model: Class B
POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE(sat) = 0.275 VOLTS
COLLECTOR 2,4
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCB VEB IB Value 30 45 Unit Vdc Vdc Vdc Adc Adc
BASE 1
II I I I IIIIIIIIIIIIIIIIIII III I I III I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II I I III III IIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III II III I I III I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III III I I III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII III
6.0 1.0 3.0 5.0 Base Current - Continuous Collector Current - Continuous Collector Current - Peak IC Total Power Dissipation @ TC = 25_C Derate above 25_C Total PD @ TA = 25_C mounted on 1 sq. (645 sq. mm) Collector pad on FR-4 bd material Total PD @ TA = 25_C mounted on 0.012 sq. (7.6 sq. mm) Collector pad on FR-4 bd material Operating and Storage Junction Temperature Range PD 3.0 24 1.56 Watts mW/_C Watts 0.72 Watts TJ, Tstg -55 to +150 _C
EMITTER 3
4
1
2 3
SOT-223 CASE 318E STYLE 1
MARKING DIAGRAM
9435R
THERMAL CHARACTERISTICS
Characteristic
9435R = Device Code
Symbol RJC RJA
Max 42 80
Unit
Thermal Resistance - Junction to Case - Junction to Ambient on 1 sq. (645 sq. mm) Collector pad on FR-4 board material - Junction to Ambient on 0.012 sq. (7.6 sq. mm) Collector pad on FR-4 board material Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds
_C/W
ORDERING INFORMATION
Device NSB9435T1 Package SOT-223 Shipping 1000/Tape & Reel
RJA
174
TL
260
_C
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2002
1
April, 2002 - Rev. 2
Publication Order Number: NSB9435T1/D
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II III I I I I I II II I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I I II II I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II II II II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II I II II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I II II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. fT = |hFE| S ftest
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Current-Gain - Bandwidth Product (Note 2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz)
Input Capacitance (VEB = 8.0 Vdc)
Output Capacitance (VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
Resistor
DC Current Gain (IC = 0.8 Adc, VCE = 1.0 Vdc) (IC = 1.2 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc)
Base-Emitter On Voltage (IC = 1.2 Adc, VCE = 4.0 Vdc)
Base-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc)
Collector-Emitter Saturation Voltage (IC = 0.8 Adc, IB = 20 mAdc) (IC = 1.2 Adc, IB = 20 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc)
Emitter Cutoff Current (VBE = 5.0 Vdc)
Collector Cutoff Current (VCE = 25 Vdc) (VCE = 25 Vdc, TJ = 125C)
Emitter-Base Voltage (IE = 50 mAdc, IC = 0 Adc)
Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc)
Characteristics
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NSB9435T1
2 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) VEBO IEBO ICER Cob hFE Cib R1 fT Min 125 110 90 7.5 6.0 30 - - - - - - - - - - - 0.155 - - Typ 135 100 220 - - 10 - - - - - - - 110 0.210 0.275 0.550 12.5 1.10 1.25 Max 20 200 150 700 - - - - - - - Adc mAdc MHz Unit Vdc Vdc Vdc Vdc Vdc kW pF pF -
NSB9435T1
0.3 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.25 0.2 0.15 0.1 0.05 0 0.001 0.01 0.1 1.2 A 0.8 A 0.5 A 0.25 A 1 IC = 3.0 A 1000
hFE, DC CURRENT GAIN
TA = 150C 25C -55C
100
VCE = 1.0 V 10 0.1 1 IC, COLLECTOR CURRENT (A) 10
IB, BASE CURRENT (mA)
Figure 1. Collector Saturation Region
Figure 2. DC Current Gain
1000
10
hFE, DC CURRENT GAIN
V, VOLTAGE (V)
TA = 150C 25C 100 -55C
1
VBE(sat)
0.1
VCE(sat)
VCE = 4.0 V 10 0.1 1 IC, COLLECTOR CURRENT (A) 10 0.01 1.0E-01 1.0E+00 IC, COLLECTOR CURRENT (A)
IC/IB = 10 1.0E+01
Figure 3. DC Current Gain
Figure 4. "ON" Voltages
1.0E+00 VBE(sat)
1.2 1
-55C 25C TA = 155C
V, VOLTAGE (V)
VCE(sat)
V, VOLTAGE (V) IC/IB = 50 1.0E+01
0.8 0.6 0.4 0.2 0
1.0E-01
1.0E-02 1.0E-01 1.0E+00 IC, COLLECTOR CURRENT (A)
0.1
1 IC, COLLECTOR CURRENT (A)
10
Figure 5. "ON" Voltages
Figure 6. VBE(on) Voltage
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NSB9435T1
1000 Cob, OUTPUT CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 10 0.5 ms 1.0 5.0 ms 100 ms 0.1
100
10 f = 1 MHz TA = 25C 1 0.1 1 10 100 VR, REVERSE VOLTAGE (V)
0.01
0.001 0.1
BONDING WIRE LIMIT THERMAL LIMIT (Single Pulse) SECONDARY BREAKDOWN LIMIT 1.0 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Output Capacitance
4.0 PD, POWER DISSIPATION (WATTS)
Figure 8. Active Region Safe Operating Area
3.0 TC
2.0
1.0 TA 0 25 50 75 100 125 150 T, TEMPERATURE (C)
There are two limitations on the power handling ability of a transistor: average junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 8 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 10. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
Figure 9. Power Derating
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.001
0.01
RJA(t) = r(t) JA JA = 174C/W D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) JA(t) 0.01 0.1 t, TIME (seconds) 1.0 10
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2 100 1000
0.0001 0.0001 0.001
Figure 10. Thermal Response
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NSB9435T1
PACKAGE DIMENSIONS
SOT-223 (TO-261) PLASTIC PACKAGE CASE 318E-04 ISSUE K
A F
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3
4
S
1 2
B
D L G J C 0.08 (0003) H M K
INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR
MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30
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NSB9435T1
Notes
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NSB9435T1
Notes
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NSB9435T1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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8
NSB9435T1/D

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